Category: Discrete Semiconductor Products
                  Transistors
                  FETs, MOSFETs
                  Single FETs, MOSFETs
Mfr: Infineon Technologies
Series: HEXFET®
Package: Tube
Product Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current – Continuous Drain (Id) @ 25°C: 31A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Rds On (Max) @ Id, Vgs: 26mOhm @ 16A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 5 V
Vgs (Max): ±16V
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V
FET Feature: –
Power Dissipation (Max): 63W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB Full-Pak
Package / Case: TO-220-3 Full Pack