Category: Discrete Semiconductor Products
                  Transistors
                  FETs, MOSFETs
                  Single FETs, MOSFETs
Mfr: Infineon Technologies
Series: HEXFET®
Packaging: Tube
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200 V
Current – Continuous Drain (Id) @ 25°C: 130A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 81A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 241 nC @ 10 V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 10720 pF @ 50 V
FET Feature: –
Power Dissipation (Max): 520W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247AC
Package / Case: TO-247-3