Category: Discrete Semiconductor Products
                  Transistors
                  FETs, MOSFETs
                  Single FETs, MOSFETs
Mfr: Infineon Technologies
Series: HEXFET®
Package: Tube
Product Status: Not For New Designs
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current – Continuous Drain (Id) @ 25°C: 202A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 4mOhm @ 121A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 5669 pF @ 25 V
FET Feature: –
Power Dissipation (Max): 333W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3
Base Product Number: IRF1404