IPW65R080CFD
MOSFET N-CH 650V 43.3A TO247-3
Category: Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Mfr: Infineon Technologies
Series: CoolMOS™
Package: Tube
Product Status: Last Time Buy
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 700 V
Current – Continuous Drain (Id) @ 25°C: 43.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 80mOhm @ 17.6A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 1.76mA
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 5030 pF @ 100 V
FET Feature: –
Power Dissipation (Max): 391W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-3-1
Package / Case: TO-247-3
Base Product Number: IPW65R080
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